Composition Determination of Si/Si1-xGex/Si by Photoreflectance Spectroscopy

UHVCVD-grown Si/Si(1-x)Ge(x)/Si heterostructure is investigated by photoreflectance spectroscopy (PR). The principle of PR in determining Ge content of a Si(1-x)Ge(x) epilayer is thoroughly described. The unambiguous E1 transition energy in the Si(1-x)Ge(x) epilayer is very useful to determine Ge co...

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Bibliographic Details
Published in:Metals and materials international 2004, 10(5), , pp.489-492
Main Authors: Chang Chun Chen, P. V. Kelly, Zhi Hong Liu, Wen Tao Huang, Wei Zhi Dou, Pei Hsin Tsien
Format: Article
Language:Korean
Subjects:
photoreflectance
SiGe/Si
UHVCVD
재료공학
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Summary:UHVCVD-grown Si/Si(1-x)Ge(x)/Si heterostructure is investigated by photoreflectance spectroscopy (PR). The principle of PR in determining Ge content of a Si(1-x)Ge(x) epilayer is thoroughly described. The unambiguous E1 transition energy in the Si(1-x)Ge(x) epilayer is very useful to determine Ge content during PR analysis. R&R study with 10 repeats at the same point indicates that the measurements of PR are reproducible. These results demonstrate that PR is very promising for analysis of Si(1-x)Ge(x) epilayer characterization with constant Ge content.
ISSN:1598-9623
2005-4149