A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing

Si/SiGe heterojunction layers grown by ultra-high-vacuum chemical vapor deposition (UHV/CVD) were characterized by Rutherford backscattering/Channeling (RBS/C). A high quality SiGe base layer was obtained. Enhancement of strain relaxation of the SiGe laye

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Bibliographic Details
Published in:Metals and materials international 2004, 10(3), , pp.285-288
Main Authors: Zhi Hong Liu, Chang Chun Chen, Wen Tao Huang, Wei Zhi Dou, Yi Lin Shan, Wei Zhang, Jun Zhu, Pei Hsin Tsien
Format: Article
Language:Korean
Subjects:
RBS/C
Si/SiGe heterostructure
strain
UHV/CVD
재료공학
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Description
Summary:Si/SiGe heterojunction layers grown by ultra-high-vacuum chemical vapor deposition (UHV/CVD) were characterized by Rutherford backscattering/Channeling (RBS/C). A high quality SiGe base layer was obtained. Enhancement of strain relaxation of the SiGe laye
ISSN:1598-9623
2005-4149