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Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts
It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser the...
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Published in: | Journal of periodontal & implant science 2010, 40(3), , pp.105-110 |
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creator | Choi, Eun-Jeong Yim, Ju-Young Koo, Ki-Tae Seol, Yang-Jo Lee, Yong-Moo Ku, Young Rhyu, In-Chul Chung, Chong-Pyoung Kim, Tae-Il |
description | It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs.
Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm(2). A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P |
doi_str_mv | 10.5051/jpis.2010.40.3.105 |
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Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm(2). A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05).
At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm(2) (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm(2) energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm(2) energy fluency than in the control.
The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs.</description><identifier>ISSN: 2093-2278</identifier><identifier>EISSN: 2093-2286</identifier><identifier>DOI: 10.5051/jpis.2010.40.3.105</identifier><identifier>PMID: 20607054</identifier><language>eng</language><publisher>Korea (South): Korean Academy of Periodontology</publisher><subject>치의학</subject><ispartof>Journal of Periodontal & Implant Science, 2010, 40(3), , pp.105-110</ispartof><rights>Copyright © 2010 Korean Academy of Periodontology 2010</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4155-f9fab2c41124c3a74032c6d8b64fb0c4e758e0fc33de0392994a70a1d2ba57443</citedby><cites>FETCH-LOGICAL-c4155-f9fab2c41124c3a74032c6d8b64fb0c4e758e0fc33de0392994a70a1d2ba57443</cites><orcidid>0000-0002-2076-5452 ; 0000-0001-5682-0604 ; 0000-0003-4087-8021</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC2895515/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC2895515/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,27924,27925,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/20607054$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001452533$$DAccess content in National Research Foundation of Korea (NRF)$$Hfree_for_read</backlink></links><search><creatorcontrib>Choi, Eun-Jeong</creatorcontrib><creatorcontrib>Yim, Ju-Young</creatorcontrib><creatorcontrib>Koo, Ki-Tae</creatorcontrib><creatorcontrib>Seol, Yang-Jo</creatorcontrib><creatorcontrib>Lee, Yong-Moo</creatorcontrib><creatorcontrib>Ku, Young</creatorcontrib><creatorcontrib>Rhyu, In-Chul</creatorcontrib><creatorcontrib>Chung, Chong-Pyoung</creatorcontrib><creatorcontrib>Kim, Tae-Il</creatorcontrib><title>Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts</title><title>Journal of periodontal & implant science</title><addtitle>J Periodontal Implant Sci</addtitle><description>It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs.
Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm(2). A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05).
At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm(2) (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm(2) energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm(2) energy fluency than in the control.
The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs.</description><subject>치의학</subject><issn>2093-2278</issn><issn>2093-2286</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpVkUtLAzEUhYMoVtQ_4EKy003rzWseG6EWXyAIoisXIZNJauzMpCYzgv_e1Nai2dybm--cXDgInRCYCBDk4n3p4oRCunKYsAkBsYMOKJRsTGmR7W77vBih4xjfIR1GS8qKfTSikEEOgh-g1yvnGz93WjXYWGt0H7G3WOFoWqd9Vw-69wHXztcGNyqagH2H34ZWdXhpQhr7rk_axs1Va7oeW1cFXyWyj0doz6ommuNNPUQvN9fPs7vxw-Pt_Wz6MNacCDG2pVUVTT2hXDOV87SnzuqiyritQHOTi8KA1YzVBlhJy5KrHBSpaaVEzjk7ROdr3y5YudBOeuV-6tzLRZDTp-d7mQsCBUno5RpdDlVrap02DqqRy-BaFb5-hP9fOveWbD4lLUohiEgGZxuD4D8GE3vZuqhN06jO-CHKnLGM84Qmkq5JHXyMwdjtLwTkKkK5ilCuIpQcJEvjlf3p3_22kt_A2DcH4pmB</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Choi, Eun-Jeong</creator><creator>Yim, Ju-Young</creator><creator>Koo, Ki-Tae</creator><creator>Seol, Yang-Jo</creator><creator>Lee, Yong-Moo</creator><creator>Ku, Young</creator><creator>Rhyu, In-Chul</creator><creator>Chung, Chong-Pyoung</creator><creator>Kim, Tae-Il</creator><general>Korean Academy of Periodontology</general><general>대한치주과학회</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope><scope>ACYCR</scope><orcidid>https://orcid.org/0000-0002-2076-5452</orcidid><orcidid>https://orcid.org/0000-0001-5682-0604</orcidid><orcidid>https://orcid.org/0000-0003-4087-8021</orcidid></search><sort><creationdate>201006</creationdate><title>Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts</title><author>Choi, Eun-Jeong ; Yim, Ju-Young ; Koo, Ki-Tae ; Seol, Yang-Jo ; Lee, Yong-Moo ; Ku, Young ; Rhyu, In-Chul ; Chung, Chong-Pyoung ; Kim, Tae-Il</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4155-f9fab2c41124c3a74032c6d8b64fb0c4e758e0fc33de0392994a70a1d2ba57443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>치의학</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, Eun-Jeong</creatorcontrib><creatorcontrib>Yim, Ju-Young</creatorcontrib><creatorcontrib>Koo, Ki-Tae</creatorcontrib><creatorcontrib>Seol, Yang-Jo</creatorcontrib><creatorcontrib>Lee, Yong-Moo</creatorcontrib><creatorcontrib>Ku, Young</creatorcontrib><creatorcontrib>Rhyu, In-Chul</creatorcontrib><creatorcontrib>Chung, Chong-Pyoung</creatorcontrib><creatorcontrib>Kim, Tae-Il</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><collection>Korean Citation Index</collection><jtitle>Journal of periodontal & implant science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Choi, Eun-Jeong</au><au>Yim, Ju-Young</au><au>Koo, Ki-Tae</au><au>Seol, Yang-Jo</au><au>Lee, Yong-Moo</au><au>Ku, Young</au><au>Rhyu, In-Chul</au><au>Chung, Chong-Pyoung</au><au>Kim, Tae-Il</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts</atitle><jtitle>Journal of periodontal & implant science</jtitle><addtitle>J Periodontal Implant Sci</addtitle><date>2010-06</date><risdate>2010</risdate><volume>40</volume><issue>3</issue><spage>105</spage><epage>110</epage><pages>105-110</pages><issn>2093-2278</issn><eissn>2093-2286</eissn><abstract>It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs.
Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm(2). A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05).
At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm(2) (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm(2) energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm(2) energy fluency than in the control.
The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs.</abstract><cop>Korea (South)</cop><pub>Korean Academy of Periodontology</pub><pmid>20607054</pmid><doi>10.5051/jpis.2010.40.3.105</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-2076-5452</orcidid><orcidid>https://orcid.org/0000-0001-5682-0604</orcidid><orcidid>https://orcid.org/0000-0003-4087-8021</orcidid><oa>free_for_read</oa></addata></record> |
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title | Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts |
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