Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well

• Published in: Electronic materials letters 2018, 14(6), , pp.774-783
• Main Authors: Joung, Hodoug, Ahn, Il-Ho, Yang, Woochul, Kim, Deuk Young
• Format: Article
• Language: English
• Subjects: Anisotropy; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Conduction bands; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Quantum wells; Spectrum analysis; Tensors; 전자/정보통신공학
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-018-0081-7

Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley. Graphical Abstract