Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were inves...

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Bibliographic Details
Published in:Bulletin of the Korean Chemical Society 2013, 34(6), , pp.1779-1782
Main Authors: Park, Taehee, Park, Eunkyung, Ahn, Juwon, Lee, Jungwoo, Lee, Jongtaek, Lee, Sang-Hwa, Kim, Jae-Yong, Yi, Whikun
Format: Article
Language:English
Subjects:
화학
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Summary:N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/μm were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible. KCI Citation Count: 4
ISSN:0253-2964
1229-5949
DOI:10.5012/bkcs.2013.34.6.1779