Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications

In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect transistor (TFET)architectures (i.e. p-i-n and p-n-p-n) has been carried out. The impact of architectural modifications such as heterogeneous gate (HG) dielectric, gate drain und...

Full description

Saved in:
Bibliographic Details
Published in:Journal of semiconductor technology and science 2012, 12(4), 48, pp.482-491
Main Authors: Narang, Rakhi, Saxena, Manoj, Gupta, R.S., Gupta, Mridula
Format: Article
Language:English
Subjects:
전기공학
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect transistor (TFET)architectures (i.e. p-i-n and p-n-p-n) has been carried out. The impact of architectural modifications such as heterogeneous gate (HG) dielectric, gate drain underlap (GDU) and asymmetric source/drain doping on the ambipolar behavior is quantified in terms of physical parameters proposed for ambipolarity characterization. Moreover, the impact on the miller capacitance is also taken into consideration since ambipolarity is directly related to reliable logic circuit operation and miller capacitance is related to circuit performance. KCI Citation Count: 64
ISSN:1598-1657
2233-4866
DOI:10.5573/jsts.2012.12.4.482