Process Considerations for 80-GHz High-Performance p-i-n SiliconPhotodetectorforOpticalInterconnect

In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) per...

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Bibliographic Details
Published in:Journal of semiconductor technology and science 2012, 12(3), 47, pp.370-376
Main Authors: 조성재, 김형진, 성민철, 박병국, James S. Harris, Jr
Format: Article
Language:English
Subjects:
전기공학
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Summary:In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f-3dB of 80 GHz at an operating voltage of 1 V was obtained. KCI Citation Count: 2
ISSN:1598-1657
2233-4866