Simulation of 4H-SiC MESFET for High Power and High Frequency Response

• Published in: Journal of semiconductor technology and science 2008, 8(3), 31, pp.251-263
• Main Authors: Chattopadhyay, S.N., Pandey, P., Overton, C.B., Krishnamoorthy, S., Leong, S.K.
• Format: Article
• Language: English
• Subjects: 전기공학
• ISSN: 1598-1657; 2233-4866
• DOI: 10.5573/jsts.2008.8.3.251

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-todrain capacitance, drain-source resistance and transconductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 ㎓ and 29 ㎓ respectively were obtained from Sentaurus TCAD and verified by the Smith’s chart. KCI Citation Count: 0