AlGaN/GaN Based Ultra‐wideband 15‐W High‐Power Amplifier with Improved Return Loss

An ultra‐wideband microwave monolithic integrated circuit high‐power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25‐μm AlGaN/GaN technology. To improve the wideband performance, resistive matching and a s...

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Bibliographic Details
Published in:ETRI journal 2016, 38(5), , pp.972-980
Main Authors: Jeong, Jin‐Cheol, Jang, Dong‐Pil, Shin, Dong‐Hwan, Yom, In‐Bok, Kim, Jae‐Duk, Lee, Wang‐Youg, Lee, Chang‐Hoon
Format: Article
Language:English
Subjects:
electronic warfare (EW)
Gallium nitride (GaN)
high power amplifier (HPA)
microwave monolithic integrated circuit (MMIC)
return loss
wideband
전자/정보통신공학
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Summary:An ultra‐wideband microwave monolithic integrated circuit high‐power amplifier with excellent input and output return losses for phased array jammer applications was designed and fabricated using commercial 0.25‐μm AlGaN/GaN technology. To improve the wideband performance, resistive matching and a shunt feedback circuit are employed. The input and output return losses were improved through a balanced design using Lange‐couplers. This three‐stage amplifier can achieve an average saturated output power of 15 W, and power added efficiency of 10% to 28%, in a continuous wave operation over a frequency range of 6 GHz to 18 GHz. The input and output return losses were demonstrated to be lower than −15 dB over a wide frequency range.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.16.2615.0020