380‐nm Ultraviolet Light‐Emitting Diodes with InGaN/AlGaN MQW Structure

In this paper, we demonstrate the capabilities of 380‐nm ultraviolet (UV) light‐emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi‐structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using...

Full description

Saved in:
Bibliographic Details
Published in:ETRI journal 2013, 35(4), , pp.566-570
Main Authors: Bae, Sung‐Bum, Kim, Sung‐Bok, Kim, Dong‐Churl, Nam, Eun Soo, Lim, Sung‐Mook, Son, Jeong‐Hwan, Jo, Yi‐Sang
Format: Article
Language:English
Subjects:
GaN, UV, LED, MQW, MOCVD
전자/정보통신공학
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we demonstrate the capabilities of 380‐nm ultraviolet (UV) light‐emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi‐structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al‐metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.13.1912.0029