A 0.13 μm CMOS UWB RF Transmitter with an On‐Chip T/R Switch

This paper presents a fully integrated 0.13 μm CMOS MB‐OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low‐pass filter, a variable gain amplifier, a voltage‐to‐current converter, an I/Q up‐mixer, a differential‐to‐single‐ended converter, a driver amplifier, and a transmit...

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Bibliographic Details
Published in:ETRI journal 2008, 30(4), , pp.526-534
Main Authors: Kim, Chang‐Wan, Duong, Quoc‐Hoang, Lee, Seung‐Sik, Lee, Sang‐Gug
Format: Article
Language:English
Subjects:
CMOS
LPF
MB‐OFDM
mixer
RFIC
T/R switch
Transmitter
ultra‐wideband
UWB
VGA
전자/정보통신공학
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Summary:This paper presents a fully integrated 0.13 μm CMOS MB‐OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low‐pass filter, a variable gain amplifier, a voltage‐to‐current converter, an I/Q up‐mixer, a differential‐to‐single‐ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a −3 dB bandwidth of 550 MHz at each sub‐band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.08.0107.0201