InGaAsP/InP Buried‐Ridge Waveguide Laser with Improved Lateral Single‐Mode Property

ABSTRACT A novel InGaAsP/InP buried‐ridg waveguide laser diode structure is proposed and demonstrated for use as a single‐mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single‐...

Full description

Saved in:
Bibliographic Details
Published in:ETRI journal 2008, 30(3), , pp.480-482
Main Authors: Oh, Su Hwan, Kim, Ki Soo, Kwon, Oh Kee, Oh, Kwang Ryong
Format: Article
Language:English
Subjects:
Buried‐ridge waveguide
single‐mode operation
전자/정보통신공학
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:ABSTRACT A novel InGaAsP/InP buried‐ridg waveguide laser diode structure is proposed and demonstrated for use as a single‐mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single‐mode operation without kinks or beam‐steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 μm up to an injection current of 500 mA.
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.08.0208.0026