Investigating the Wafer Temperature in an Atmospheric-Pressure Plasma Process

The atmospheric-pressure plasma (APP) process is used in various fields nowadays. One important characteristic of the APP process is the temperature of the wafer heated by the atmospheric-pressure plasma. In this study, the effects of the input power and the discharge distance on the heat generated...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2020, 77(6), , pp.477-481
Main Authors: Kwon, Gi-Chung, Kim, Woo Jae, Lee, Tae Hyun, Lee, Hwan Hee, Kwon, Hee Tae, Shin, Gi Won
Format: Article
Language:English
Subjects:
Discharge
Electrical properties
Flow resistance
Infrared cameras
Mathematical and Computational Physics
Particle and Nuclear Physics
Physics
Physics and Astronomy
Plasma
Resistance heating
Theoretical
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Summary:The atmospheric-pressure plasma (APP) process is used in various fields nowadays. One important characteristic of the APP process is the temperature of the wafer heated by the atmospheric-pressure plasma. In this study, the effects of the input power and the discharge distance on the heat generated during the atmospheric plasma process were analyzed, and the mechanism was predicted. We used a fluoroptic thermometer and infrared camera to measure the wafer temperature and a VI probe and a current probe to measure the electrical properties. The results showed that, as the input power was increased, the wafer temperature increased, and as the discharge distance was increased, the wafer temperature decreased. Thus, we can confirm that resistance heating was the mechanism that caused the wafer temperature to rise; it is related to the current intensity and the resistance of the current flowing through the wafer.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.77.477