Blistering of potassium-tantalate single crystals induced by helium implantation

Potassium-tantalate crystals were implanted with helium ions at 190 keV and then thermally treated at different temperatures to study their blistering. The surface blistering, hydrogen depth distribution, and lattice damage induced by He + implantation were characterized using secondary ion mass spe...

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Bibliographic Details
Published in:Journal of the Korean Physical Society 2021, 78(9), , pp.750-754
Main Authors: Xiang, Bingxi, Han, Huangpu, Ma, Yujie, Liu, Kaige, Wang, Lei, Kong, Lingbing, Chai, Guangyue, Ruan, Shuangchen
Format: Article
Language:English
Subjects:
Backscattering
Blistering
Crystals
Heat treatment
Helium ions
Implantation
Mathematical and Computational Physics
Original Paper
Particle and Nuclear Physics
Physics
Physics and Astronomy
Potassium
Secondary ion mass spectroscopy
Single crystals
Theoretical
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Summary:Potassium-tantalate crystals were implanted with helium ions at 190 keV and then thermally treated at different temperatures to study their blistering. The surface blistering, hydrogen depth distribution, and lattice damage induced by He + implantation were characterized using secondary ion mass spectroscopy, optical and transmission electron microscopy, and Rutherford backscattering spectrometry. The blistering of potassium-tantalate crystals was achieved at certain ion fluences followed by thermal treatment.
ISSN:0374-4884
1976-8524
DOI:10.1007/s40042-021-00115-0