RF/analog Performance Assessment of High Frequency, Low Power In 0.3 Al 0.7As/InAs/InSb/In0.3 Al0.7 As HEMT Under High Temperature Effect

• Published in: Transactions on electrical and electronic materials 2021, 22(4), , pp.459-466
• Main Authors: M. Khaouani, H. Bencherif, A. Hamdoune, A. Belarbi, Z. Kourdi
• Format: Article
• Language: English
• Subjects: 전기공학
• ISSN: 1229-7607; 2092-7592
• DOI: 10.1007/s42341-020-00250-8

In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3 Al0.7 As/InAs/InSb/In0.3 Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature eff ect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage ( V th ), transconductance ( g m ), and I on / I off ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of −1.75 V, a high value of transconductance g m of 650 mS/mm, I on / I off ratio of 1 × 10 6 , a transition frequency ( f t ) of 790 GHz, and a maximum frequency ( f max ) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce g m , and I on / I off ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability. KCI Citation Count: 0