Raman Shift of Surface Reaction and Plasma Induced Surface Damage by TNF3/BNF3 Reactive Ion Etching Process

• Published in: Electronic materials letters 2022, 18(3), , pp.321-329
• Main Authors: Shim, Ho Jae, Kim, Jin Seok, Ahn, Da Won, Choe, Jin Hyun, Jung, Eunsu, Oh, Donghyuk, Kim, Kyung Soo, Lee, Sung Chul, Pyo, Sung Gyu
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Characterization and Modeling; Chemistry and Materials Science; Condensed Matter Physics; Contact resistance; Etching; High aspect ratio; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; Optimization; Original Article - Theory; Photoelectrons; Product reliability; Raman spectroscopy; Reactive ion etching; Silicon; Spectrum analysis; Surface reactions; X ray photoelectron spectroscopy; 전자/정보통신공학
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-022-00341-z

We examined the conditions for process optimization with the exposure of hot H 2 /NF 3 mixture to a chemical oxide on the Si surface. Etching characteristics are described; then the etching mechanism is discussed based on the Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) observations that occurred during the etching. This research viewed the hydrogen/NF s based reactive clean process as an oxide, silicon clean process technology to enhance product reliability by improving light controlled etching, which is considered one of the factors that can weaken contact resistance when forming gates and below 10 nm pattern profiles. Furthermore, the existing properties that occur when applied to nanoscale sized holes and trenches with high aspect ratio were also discussed. Graphical Abstract