Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction

The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X‐ray microdiffraction and high resolution monochromatic X‐ray diffraction. Tilt boundaries formed at the colu...

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Bibliographic Details
Published in:Physica Status Solidi (b) 2006-06, Vol.243 (7), p.1508-1513
Main Authors: Barabash, R. I., Ice, G. E., Liu, W., Roder, C., Figge, S., Einfeldt, S., Hommel, D., Katona, T. M., Speck, J. S., DenBaars, S. P., Davis, R. F.
Format: Article
Language:English
Subjects:
61.10.Nz
61.72.Lk
68.55.Jk
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X‐ray microdiffraction and high resolution monochromatic X‐ray diffraction. Tilt boundaries formed at the column/wing interface depending on the growth conditions and geometry of the striped substrate. The measurements revealed that the free‐hanging wings are tilted upward at room temperature. A misorientation between the GaN(0001) and the Si(111) or SiC(0001) surface normal is observed. Distinct structural properties of the pendeo and cantilever epitaxially grown samples are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200565442