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Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction

The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X‐ray microdiffraction and high resolution monochromatic X‐ray diffraction. Tilt boundaries formed at the colu...

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Published in:Physica Status Solidi (b) 2006-06, Vol.243 (7), p.1508-1513
Main Authors: Barabash, R. I., Ice, G. E., Liu, W., Roder, C., Figge, S., Einfeldt, S., Hommel, D., Katona, T. M., Speck, J. S., DenBaars, S. P., Davis, R. F.
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cited_by cdi_FETCH-LOGICAL-c4552-d27eb144c7e792cc8005bf6e888fbda6bdd740fcde29a01eafde8e850b32d273
cites cdi_FETCH-LOGICAL-c4552-d27eb144c7e792cc8005bf6e888fbda6bdd740fcde29a01eafde8e850b32d273
container_end_page 1513
container_issue 7
container_start_page 1508
container_title Physica Status Solidi (b)
container_volume 243
creator Barabash, R. I.
Ice, G. E.
Liu, W.
Roder, C.
Figge, S.
Einfeldt, S.
Hommel, D.
Katona, T. M.
Speck, J. S.
DenBaars, S. P.
Davis, R. F.
description The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X‐ray microdiffraction and high resolution monochromatic X‐ray diffraction. Tilt boundaries formed at the column/wing interface depending on the growth conditions and geometry of the striped substrate. The measurements revealed that the free‐hanging wings are tilted upward at room temperature. A misorientation between the GaN(0001) and the Si(111) or SiC(0001) surface normal is observed. Distinct structural properties of the pendeo and cantilever epitaxially grown samples are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssb.200565442
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fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1003218</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29357222</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4552-d27eb144c7e792cc8005bf6e888fbda6bdd740fcde29a01eafde8e850b32d273</originalsourceid><addsrcrecordid>eNqFkE1v1DAURS0EEkNhy9pCgl0Gf8TjZAmjMq3UFqRWojvr5cXpGDxxsF0g_x6PUhV2rLy55zzfS8hrztacMfF-SqlbC8bURtW1eEJWXAleyVbxp2TFpGYVb7V4Tl6k9I0xprnkKwKXME1uvKMHl0J0dsyQXRgpjD3FOKcM3oe7CNPeIc3OZ-pGuoMr6mG2MdGfDugU_Iz7GA4FxSLCGHo3DBHwqHpJng3gk3318J6Qm0-nN9uz6uLz7nz74aLCWilR9ULbjtc1aqtbgdiUIt2wsU3TDF0Pm67vdc0G7K1ogXELQ28b2yjWSVFYeULeLNqQsjMJXba4xzCOFrMp-0jBmxJ6t4SmGH7c25RNqY3WexhtuE9GtFJpIUQJrpdg6ZJStIOZojtAnIvqaBPmuLZ5XLsAbx_MkBB8KT-iS3-p0omJ5vjNdsn9ct7O_7GaL9fXH_-9US2sS9n-fmQhfjcbLbUyX692Znup2tta3xou_wDMKKKQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29357222</pqid></control><display><type>article</type><title>Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction</title><source>Wiley-Blackwell Read &amp; Publish Collection</source><creator>Barabash, R. I. ; Ice, G. E. ; Liu, W. ; Roder, C. ; Figge, S. ; Einfeldt, S. ; Hommel, D. ; Katona, T. M. ; Speck, J. S. ; DenBaars, S. P. ; Davis, R. F.</creator><creatorcontrib>Barabash, R. I. ; Ice, G. E. ; Liu, W. ; Roder, C. ; Figge, S. ; Einfeldt, S. ; Hommel, D. ; Katona, T. M. ; Speck, J. S. ; DenBaars, S. P. ; Davis, R. F. ; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)</creatorcontrib><description>The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X‐ray microdiffraction and high resolution monochromatic X‐ray diffraction. Tilt boundaries formed at the column/wing interface depending on the growth conditions and geometry of the striped substrate. The measurements revealed that the free‐hanging wings are tilted upward at room temperature. A misorientation between the GaN(0001) and the Si(111) or SiC(0001) surface normal is observed. Distinct structural properties of the pendeo and cantilever epitaxially grown samples are discussed. (© 2006 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.200565442</identifier><identifier>CODEN: PSSBBD</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>61.10.Nz ; 61.72.Lk ; 68.55.Jk ; Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1508-1513</ispartof><rights>Copyright © 2006 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4552-d27eb144c7e792cc8005bf6e888fbda6bdd740fcde29a01eafde8e850b32d273</citedby><cites>FETCH-LOGICAL-c4552-d27eb144c7e792cc8005bf6e888fbda6bdd740fcde29a01eafde8e850b32d273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,309,310,314,780,784,789,790,885,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=17920287$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/1003218$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Barabash, R. I.</creatorcontrib><creatorcontrib>Ice, G. E.</creatorcontrib><creatorcontrib>Liu, W.</creatorcontrib><creatorcontrib>Roder, C.</creatorcontrib><creatorcontrib>Figge, S.</creatorcontrib><creatorcontrib>Einfeldt, S.</creatorcontrib><creatorcontrib>Hommel, D.</creatorcontrib><creatorcontrib>Katona, T. M.</creatorcontrib><creatorcontrib>Speck, J. S.</creatorcontrib><creatorcontrib>DenBaars, S. P.</creatorcontrib><creatorcontrib>Davis, R. F.</creatorcontrib><creatorcontrib>Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)</creatorcontrib><title>Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction</title><title>Physica Status Solidi (b)</title><addtitle>phys. stat. sol. (b)</addtitle><description>The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X‐ray microdiffraction and high resolution monochromatic X‐ray diffraction. Tilt boundaries formed at the column/wing interface depending on the growth conditions and geometry of the striped substrate. The measurements revealed that the free‐hanging wings are tilted upward at room temperature. A misorientation between the GaN(0001) and the Si(111) or SiC(0001) surface normal is observed. Distinct structural properties of the pendeo and cantilever epitaxially grown samples are discussed. (© 2006 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><subject>61.10.Nz</subject><subject>61.72.Lk</subject><subject>68.55.Jk</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkE1v1DAURS0EEkNhy9pCgl0Gf8TjZAmjMq3UFqRWojvr5cXpGDxxsF0g_x6PUhV2rLy55zzfS8hrztacMfF-SqlbC8bURtW1eEJWXAleyVbxp2TFpGYVb7V4Tl6k9I0xprnkKwKXME1uvKMHl0J0dsyQXRgpjD3FOKcM3oe7CNPeIc3OZ-pGuoMr6mG2MdGfDugU_Iz7GA4FxSLCGHo3DBHwqHpJng3gk3318J6Qm0-nN9uz6uLz7nz74aLCWilR9ULbjtc1aqtbgdiUIt2wsU3TDF0Pm67vdc0G7K1ogXELQ28b2yjWSVFYeULeLNqQsjMJXba4xzCOFrMp-0jBmxJ6t4SmGH7c25RNqY3WexhtuE9GtFJpIUQJrpdg6ZJStIOZojtAnIvqaBPmuLZ5XLsAbx_MkBB8KT-iS3-p0omJ5vjNdsn9ct7O_7GaL9fXH_-9US2sS9n-fmQhfjcbLbUyX692Znup2tta3xou_wDMKKKQ</recordid><startdate>200606</startdate><enddate>200606</enddate><creator>Barabash, R. I.</creator><creator>Ice, G. E.</creator><creator>Liu, W.</creator><creator>Roder, C.</creator><creator>Figge, S.</creator><creator>Einfeldt, S.</creator><creator>Hommel, D.</creator><creator>Katona, T. M.</creator><creator>Speck, J. S.</creator><creator>DenBaars, S. P.</creator><creator>Davis, R. F.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>200606</creationdate><title>Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction</title><author>Barabash, R. I. ; Ice, G. E. ; Liu, W. ; Roder, C. ; Figge, S. ; Einfeldt, S. ; Hommel, D. ; Katona, T. M. ; Speck, J. S. ; DenBaars, S. P. ; Davis, R. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4552-d27eb144c7e792cc8005bf6e888fbda6bdd740fcde29a01eafde8e850b32d273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>61.10.Nz</topic><topic>61.72.Lk</topic><topic>68.55.Jk</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Barabash, R. I.</creatorcontrib><creatorcontrib>Ice, G. E.</creatorcontrib><creatorcontrib>Liu, W.</creatorcontrib><creatorcontrib>Roder, C.</creatorcontrib><creatorcontrib>Figge, S.</creatorcontrib><creatorcontrib>Einfeldt, S.</creatorcontrib><creatorcontrib>Hommel, D.</creatorcontrib><creatorcontrib>Katona, T. M.</creatorcontrib><creatorcontrib>Speck, J. S.</creatorcontrib><creatorcontrib>DenBaars, S. P.</creatorcontrib><creatorcontrib>Davis, R. F.</creatorcontrib><creatorcontrib>Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Physica Status Solidi (b)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Barabash, R. I.</au><au>Ice, G. E.</au><au>Liu, W.</au><au>Roder, C.</au><au>Figge, S.</au><au>Einfeldt, S.</au><au>Hommel, D.</au><au>Katona, T. M.</au><au>Speck, J. S.</au><au>DenBaars, S. P.</au><au>Davis, R. F.</au><aucorp>Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction</atitle><jtitle>Physica Status Solidi (b)</jtitle><addtitle>phys. stat. sol. (b)</addtitle><date>2006-06</date><risdate>2006</risdate><volume>243</volume><issue>7</issue><spage>1508</spage><epage>1513</epage><pages>1508-1513</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><coden>PSSBBD</coden><abstract>The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X‐ray microdiffraction and high resolution monochromatic X‐ray diffraction. Tilt boundaries formed at the column/wing interface depending on the growth conditions and geometry of the striped substrate. The measurements revealed that the free‐hanging wings are tilted upward at room temperature. A misorientation between the GaN(0001) and the Si(111) or SiC(0001) surface normal is observed. Distinct structural properties of the pendeo and cantilever epitaxially grown samples are discussed. (© 2006 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssb.200565442</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record>
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1521-3951
language eng
recordid cdi_osti_scitechconnect_1003218
source Wiley-Blackwell Read & Publish Collection
subjects 61.10.Nz
61.72.Lk
68.55.Jk
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T11%3A44%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mapping%20misorientation%20and%20crystallographic%20tilt%20in%20GaN%20layers%20via%20polychromatic%20microdiffraction&rft.jtitle=Physica%20Status%20Solidi%20(b)&rft.au=Barabash,%20R.%20I.&rft.aucorp=Oak%20Ridge%20National%20Lab.%20(ORNL),%20Oak%20Ridge,%20TN%20(United%20States)&rft.date=2006-06&rft.volume=243&rft.issue=7&rft.spage=1508&rft.epage=1513&rft.pages=1508-1513&rft.issn=0370-1972&rft.eissn=1521-3951&rft.coden=PSSBBD&rft_id=info:doi/10.1002/pssb.200565442&rft_dat=%3Cproquest_osti_%3E29357222%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c4552-d27eb144c7e792cc8005bf6e888fbda6bdd740fcde29a01eafde8e850b32d273%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29357222&rft_id=info:pmid/&rfr_iscdi=true