Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy

CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal’s performance. In this study, CZT cr...

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Bibliographic Details
Published in:Journal of electronic materials 2008-09, Vol.37 (9), p.1438-1443
Main Authors: Hawkins, Samantha A., Villa-Aleman, Eliel, Duff, Martine C., Hunter, Doug B., Burger, Arnold, Groza, Michael, Buliga, Vladimir, Black, David R.
Format: Article
Language:English
Subjects:
AMBIENT TEMPERATURE
Applied sciences
CADMIUM TELLURIDES
Characterization and Evaluation of Materials
Chemistry and Materials Science
Cross-disciplinary physics: materials science
rheology
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALS
DEFECTS
Electronics
Electronics and Microelectronics
ENRICHMENT
Exact sciences and technology
GROWTH
Instrumentation
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
LASERS
Materials
Materials Science
Methods of crystal growth
physics of crystal growth
Optical and Electronic Materials
Physics
RADIATION DETECTORS
RAMAN SPECTROSCOPY
SCATTERING
SEMICONDUCTOR DETECTORS
Solid State Physics
SPECTROSCOPY
Spectrum analysis
SURFACES
TELLURIUM
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
X- and γ-ray instruments and techniques
X- and γ-ray sources, mirrors, gratings and detectors
ZINC TELLURIDES
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Summary:CdZnTe (CZT) crystals can be grown under controlled conditions to produce high-quality crystals to be used as room-temperature radiation detectors. Even the best crystal growth methods result in defects, such as tellurium secondary phases, that affect the crystal’s performance. In this study, CZT crystals were analyzed by micro-Raman spectroscopy. The growth of Te rich areas on the surface was induced by low-power lasers. The growth was observed versus time with low-power Raman scattering and was observed immediately under higher-power conditions. The detector response was also measured after induced Te enrichment.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-008-0448-x