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Atomic structure, energetics, dynamics, and manipulation of topological solitons in indium chains on Si(111) surfaces

Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variabletemperature measurements of the soliton population allow us to determine the soliton formation energy...

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Bibliographic Details
Published in:Physical review letters 2011-01, Vol.106 (2)
Main Authors: Zhang, Hui, Choi, Jin-Ho, Xu, Yang, Wang, Xiuxia, Zhai, Xiaofang, Wang, Bing, Zeng, Changgan, Cho, Jun-Hyung, Zhang, Zhenyu, Hou, J. G.
Format: Article
Language:English
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Summary:Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variabletemperature measurements of the soliton population allow us to determine the soliton formation energy to be 60 meV, smaller than one half of the band gap of 200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field enhanced soliton dynamics, and the feasibility of aggregating solitons into soliton polymers.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.106.026801