Distribution of bismuth atoms in epitaxial GaAsBi

The distribution of Bi atoms in epitaxial GaAs ( 1 − x ) Bi x is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extrac...

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Bibliographic Details
Published in:Applied physics letters 2011-03, Vol.98 (10), p.101902-101902-3
Main Authors: Sales, D. L., Guerrero, E., Rodrigo, J. F., Galindo, P. L., Yáñez, A., Shafi, M., Khatab, A., Mari, R. H., Henini, M., Novikov, S., Chisholm, M. F., Molina, S. I.
Format: Article
Language:English
Subjects:
ATOMIC NUMBER
ATOMS
BISMUTH
DISTRIBUTION
EPITAXY
GALLIUM ARSENIDES
LAYERS
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
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Summary:The distribution of Bi atoms in epitaxial GaAs ( 1 − x ) Bi x is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3562376