Loading…
Distribution of bismuth atoms in epitaxial GaAsBi
The distribution of Bi atoms in epitaxial GaAs ( 1 − x ) Bi x is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extrac...
Saved in:
| Published in: | Applied physics letters 2011-03, Vol.98 (10), p.101902-101902-3 |
|---|---|
| Main Authors: | , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c311t-5e2c4cd7a3e65f22e4c652ee02175036f47f477cb34bad38363485837f336b413 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c311t-5e2c4cd7a3e65f22e4c652ee02175036f47f477cb34bad38363485837f336b413 |
| container_end_page | 101902-3 |
| container_issue | 10 |
| container_start_page | 101902 |
| container_title | Applied physics letters |
| container_volume | 98 |
| creator | Sales, D. L. Guerrero, E. Rodrigo, J. F. Galindo, P. L. Yáñez, A. Shafi, M. Khatab, A. Mari, R. H. Henini, M. Novikov, S. Chisholm, M. F. Molina, S. I. |
| description | The distribution of Bi atoms in epitaxial
GaAs
(
1
−
x
)
Bi
x
is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material. |
| doi_str_mv | 10.1063/1.3562376 |
| format | article |
| fullrecord | <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1011021</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c311t-5e2c4cd7a3e65f22e4c652ee02175036f47f477cb34bad38363485837f336b413</originalsourceid><addsrcrecordid>eNp1kMFKAzEQhoMouFYPvsHizcPWTGaTrBehVq1CwYueQzZNaKS7KZsU9O3Nsj14EQZ-Bj7-YT5CroHOgQq8gzlywVCKE1IAlbJCgOaUFJRSrMQ9h3NyEeNXXjlDLAg8-ZgG3x6SD30ZXNn62B3SttQpdLH0fWn3Pulvr3flSi_io78kZ07vor065ox8vjx_LF-r9fvqbblYVyafTBW3zNRmIzVawR1jtjaCM2spA8kpClfLPNK0WLd6gw0KrBveoHSIoq0BZ-Rm6g0xeRWNT9ZsTeh7a5ICCpCbMnQ7QWYIMQ7Wqf3gOz38ZEKNQhSoo5DMPkzs2KXHf_-H_1pRwanRCv4CeWBlug</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Distribution of bismuth atoms in epitaxial GaAsBi</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics</source><creator>Sales, D. L. ; Guerrero, E. ; Rodrigo, J. F. ; Galindo, P. L. ; Yáñez, A. ; Shafi, M. ; Khatab, A. ; Mari, R. H. ; Henini, M. ; Novikov, S. ; Chisholm, M. F. ; Molina, S. I.</creator><creatorcontrib>Sales, D. L. ; Guerrero, E. ; Rodrigo, J. F. ; Galindo, P. L. ; Yáñez, A. ; Shafi, M. ; Khatab, A. ; Mari, R. H. ; Henini, M. ; Novikov, S. ; Chisholm, M. F. ; Molina, S. I. ; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)</creatorcontrib><description>The distribution of Bi atoms in epitaxial
GaAs
(
1
−
x
)
Bi
x
is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3562376</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ATOMIC NUMBER ; ATOMS ; BISMUTH ; DISTRIBUTION ; EPITAXY ; GALLIUM ARSENIDES ; LAYERS ; MATERIALS SCIENCE ; SEMICONDUCTOR MATERIALS</subject><ispartof>Applied physics letters, 2011-03, Vol.98 (10), p.101902-101902-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c311t-5e2c4cd7a3e65f22e4c652ee02175036f47f477cb34bad38363485837f336b413</citedby><cites>FETCH-LOGICAL-c311t-5e2c4cd7a3e65f22e4c652ee02175036f47f477cb34bad38363485837f336b413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3562376$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27924,27925,76383</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1011021$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sales, D. L.</creatorcontrib><creatorcontrib>Guerrero, E.</creatorcontrib><creatorcontrib>Rodrigo, J. F.</creatorcontrib><creatorcontrib>Galindo, P. L.</creatorcontrib><creatorcontrib>Yáñez, A.</creatorcontrib><creatorcontrib>Shafi, M.</creatorcontrib><creatorcontrib>Khatab, A.</creatorcontrib><creatorcontrib>Mari, R. H.</creatorcontrib><creatorcontrib>Henini, M.</creatorcontrib><creatorcontrib>Novikov, S.</creatorcontrib><creatorcontrib>Chisholm, M. F.</creatorcontrib><creatorcontrib>Molina, S. I.</creatorcontrib><creatorcontrib>Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)</creatorcontrib><title>Distribution of bismuth atoms in epitaxial GaAsBi</title><title>Applied physics letters</title><description>The distribution of Bi atoms in epitaxial
GaAs
(
1
−
x
)
Bi
x
is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material.</description><subject>ATOMIC NUMBER</subject><subject>ATOMS</subject><subject>BISMUTH</subject><subject>DISTRIBUTION</subject><subject>EPITAXY</subject><subject>GALLIUM ARSENIDES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>SEMICONDUCTOR MATERIALS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kMFKAzEQhoMouFYPvsHizcPWTGaTrBehVq1CwYueQzZNaKS7KZsU9O3Nsj14EQZ-Bj7-YT5CroHOgQq8gzlywVCKE1IAlbJCgOaUFJRSrMQ9h3NyEeNXXjlDLAg8-ZgG3x6SD30ZXNn62B3SttQpdLH0fWn3Pulvr3flSi_io78kZ07vor065ox8vjx_LF-r9fvqbblYVyafTBW3zNRmIzVawR1jtjaCM2spA8kpClfLPNK0WLd6gw0KrBveoHSIoq0BZ-Rm6g0xeRWNT9ZsTeh7a5ICCpCbMnQ7QWYIMQ7Wqf3gOz38ZEKNQhSoo5DMPkzs2KXHf_-H_1pRwanRCv4CeWBlug</recordid><startdate>20110307</startdate><enddate>20110307</enddate><creator>Sales, D. L.</creator><creator>Guerrero, E.</creator><creator>Rodrigo, J. F.</creator><creator>Galindo, P. L.</creator><creator>Yáñez, A.</creator><creator>Shafi, M.</creator><creator>Khatab, A.</creator><creator>Mari, R. H.</creator><creator>Henini, M.</creator><creator>Novikov, S.</creator><creator>Chisholm, M. F.</creator><creator>Molina, S. I.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20110307</creationdate><title>Distribution of bismuth atoms in epitaxial GaAsBi</title><author>Sales, D. L. ; Guerrero, E. ; Rodrigo, J. F. ; Galindo, P. L. ; Yáñez, A. ; Shafi, M. ; Khatab, A. ; Mari, R. H. ; Henini, M. ; Novikov, S. ; Chisholm, M. F. ; Molina, S. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-5e2c4cd7a3e65f22e4c652ee02175036f47f477cb34bad38363485837f336b413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ATOMIC NUMBER</topic><topic>ATOMS</topic><topic>BISMUTH</topic><topic>DISTRIBUTION</topic><topic>EPITAXY</topic><topic>GALLIUM ARSENIDES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>SEMICONDUCTOR MATERIALS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sales, D. L.</creatorcontrib><creatorcontrib>Guerrero, E.</creatorcontrib><creatorcontrib>Rodrigo, J. F.</creatorcontrib><creatorcontrib>Galindo, P. L.</creatorcontrib><creatorcontrib>Yáñez, A.</creatorcontrib><creatorcontrib>Shafi, M.</creatorcontrib><creatorcontrib>Khatab, A.</creatorcontrib><creatorcontrib>Mari, R. H.</creatorcontrib><creatorcontrib>Henini, M.</creatorcontrib><creatorcontrib>Novikov, S.</creatorcontrib><creatorcontrib>Chisholm, M. F.</creatorcontrib><creatorcontrib>Molina, S. I.</creatorcontrib><creatorcontrib>Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sales, D. L.</au><au>Guerrero, E.</au><au>Rodrigo, J. F.</au><au>Galindo, P. L.</au><au>Yáñez, A.</au><au>Shafi, M.</au><au>Khatab, A.</au><au>Mari, R. H.</au><au>Henini, M.</au><au>Novikov, S.</au><au>Chisholm, M. F.</au><au>Molina, S. I.</au><aucorp>Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Distribution of bismuth atoms in epitaxial GaAsBi</atitle><jtitle>Applied physics letters</jtitle><date>2011-03-07</date><risdate>2011</risdate><volume>98</volume><issue>10</issue><spage>101902</spage><epage>101902-3</epage><pages>101902-101902-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The distribution of Bi atoms in epitaxial
GaAs
(
1
−
x
)
Bi
x
is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3562376</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2011-03, Vol.98 (10), p.101902-101902-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1011021 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics |
| subjects | ATOMIC NUMBER ATOMS BISMUTH DISTRIBUTION EPITAXY GALLIUM ARSENIDES LAYERS MATERIALS SCIENCE SEMICONDUCTOR MATERIALS |
| title | Distribution of bismuth atoms in epitaxial GaAsBi |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T01%3A30%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Distribution%20of%20bismuth%20atoms%20in%20epitaxial%20GaAsBi&rft.jtitle=Applied%20physics%20letters&rft.au=Sales,%20D.%20L.&rft.aucorp=Oak%20Ridge%20National%20Lab.%20(ORNL),%20Oak%20Ridge,%20TN%20(United%20States)&rft.date=2011-03-07&rft.volume=98&rft.issue=10&rft.spage=101902&rft.epage=101902-3&rft.pages=101902-101902-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3562376&rft_dat=%3Cscitation_osti_%3Eapl%3C/scitation_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c311t-5e2c4cd7a3e65f22e4c652ee02175036f47f477cb34bad38363485837f336b413%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |