Multiscale three-dimensional simulations of charge gain and transport in diamond

A promising new concept of a diamond-amplified photocathode for generation of high-current, high-brightness, and low thermal emittance electron beams was recently proposed and is currently under active development. Detailed understanding of physical processes with multiple energy and time scales is...

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Bibliographic Details
Published in:Journal of applied physics 2010-10, Vol.108 (7)
Main Authors: Dimitrov, D. A., Busby, R., Cary, J. R., Ben-Zvi, I., Rao, T., Smedley, J., Chang, X., Keister, J. W., Wu, Q., Muller, E.
Format: Article
Language:English
Subjects:
CATHODES
CHARGE TRANSPORT
DESIGN
DIAMONDS
EFFICIENCY
ELECTRIC FIELDS
ELECTRON BEAMS
ELECTRONS
INELASTIC SCATTERING
PARTICLE ACCELERATORS
PHOTOCATHODES
SCATTERING
SIMULATION
TRANSPORT
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Summary:A promising new concept of a diamond-amplified photocathode for generation of high-current, high-brightness, and low thermal emittance electron beams was recently proposed and is currently under active development. Detailed understanding of physical processes with multiple energy and time scales is required to design reliable and efficient diamond-amplifier cathodes. We have implemented models, within the VORPAL computational framework, to simulate secondary electron generation and charge transport in diamond in order to facilitate the investigation of the relevant effects involved. The models include inelastic scattering of electrons and holes for generation of electron-hole pairs, elastic, phonon, and charge impurity scattering. We describe the integrated modeling capabilities we developed and present results on charge gain and collection efficiency as a function of primary electron energy and applied electric field. We compare simulation results with available experimental data. The simulations show an overall qualitative agreement with the observed charge gain from transmission mode experiments and have enabled better understanding of the collection efficiency measurements.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3491041