Atomically Resolved Mapping of Polarization and Electric Fields Across Ferroelectric/Oxide Interfaces by Z-contrast Imaging

Direct atomic displacement mapping at ferroelectric interfaces by aberration corrected scanning transmission electron microscopy(STEM) (a‐STEM image, b‐corresponding displacement profile) is combined with Landau‐Ginsburg‐Devonshire theory to obtain the complete interface electrostatics in real space...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2011-06, Vol.23 (21), p.2474-2479
Main Authors: Chang, Hye Jung, Kalinin, Sergei V., Morozovska, Anna N., Huijben, Mark, Chu, Ying-Hao, Yu, Pu, Ramesh, Ramamoorthy, Eliseev, Evgeny A., Svechnikov, George S., Pennycook, Stephen J., Borisevich, Albina Y.
Format: Article
Language:English
Subjects:
ATOMIC DISPLACEMENTS
ELECTRIC FIELDS
Electricity
ELECTRONS
ELECTROSTATICS
MATERIALS SCIENCE
Microscopy, Electron, Scanning Transmission
Oxides - chemistry
POLARIZATION
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Summary:Direct atomic displacement mapping at ferroelectric interfaces by aberration corrected scanning transmission electron microscopy(STEM) (a‐STEM image, b‐corresponding displacement profile) is combined with Landau‐Ginsburg‐Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201004641