Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study

We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bond...

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Bibliographic Details
Published in:Journal of applied physics 2010-06, Vol.107 (12), p.123504-123504-9
Main Authors: Li, J. H., Stokes, D. W., Wickett, J. C, Caha, O., Bassler, K. E., Moss, S. C.
Format: Article
Language:English
Subjects:
CHEMICAL BONDS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSTRUCTURES
national synchrotron light source
STRAINS
SUPERLATTICES
X-RAY DIFFRACTION
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Summary:We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces (IFs). We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the IFs. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3429100