Loading…

Indium−Tin−Oxide-Based Transparent Conducting Layers for Highly Efficient Photovoltaic Devices

Additional hydrogen (H2) annealing and subsequent electrochemical treatment are found to make tin-doped indium oxide (ITO)-based photoelectrodes suitable for highly efficient dye sensitized solar cells. The additional H2 annealing process recovered the electrical conductivity of the ITO film the sam...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physical chemistry. C 2009-04, Vol.113 (17), p.7443-7447
Main Authors: Lee, Sangwook, Noh, Jun Hong, Bae, Shin-Tae, Cho, In-Sun, Kim, Jin Young, Shin, Hyunho, Lee, Jung-Kun, Jung, Hyun Suk, Hong, Kug Sun
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Additional hydrogen (H2) annealing and subsequent electrochemical treatment are found to make tin-doped indium oxide (ITO)-based photoelectrodes suitable for highly efficient dye sensitized solar cells. The additional H2 annealing process recovered the electrical conductivity of the ITO film the same as its initial high conductivity, which enhanced the charge collecting property. Moreover, the employment of electrochemical oxidation of TiO2/ITO photoelectrode improved the energy conversion efficiency of the ITO-based dye-sensitized solar cells (DSSC), higher than that of a conventional FTO-based DSSC. Electrochemical impedance analysis showed that the H2 annealing process reduced the internal resistance of the cell, i.e., the resistance of the ITO and the Schottky barrier at the TiO2/ITO interface were reduced, and that the electrochemical treatment recovered the diodelike characteristics of the DSSC by retarding back electron transfer from the photoelectrode to the electrolyte. The present work demonstrates that thermally and electrochemically modified ITO-based photoelectrode is another alternative to the conventionally used FTO-based photoelectrode.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp809011a