Hard X-ray Nano Patterning Using a Sectioned Multilayer

We report a hard x-ray patterning capable of drawing lines with a width below 100 nm using x-rays at 0.165 nm. A specially prepared mask based on multilayer growth technology was used as an x-ray mask effectively. The x-ray Talbot effect in near field was investigated and utilized in the patterning....

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Bibliographic Details
Published in:Journal of applied physics 2011-02, Vol.109 (4)
Main Authors: Lee, S.Y., Conley, R., Cho, I.H., Kim, J.M., Yan, H., Liu, C., Macrander, A.T., Maser, J., Stephenson, G.B., Kang, H.C., Noh, D.Y.
Format: Article
Language:English
Subjects:
BNL
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
HARD X RADIATION
PHYSICS
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Summary:We report a hard x-ray patterning capable of drawing lines with a width below 100 nm using x-rays at 0.165 nm. A specially prepared mask based on multilayer growth technology was used as an x-ray mask effectively. The x-ray Talbot effect in near field was investigated and utilized in the patterning. Since multilayers with a few nanometer layer spacing are readily available, the proposed hard x-ray nano patterning, free of the limit imposed by the Rayleigh criterion in optical range, can potentially be an ultimate optical lithography technique.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3552589