Electric control of magnetization relaxation in thin film magnetic insulators

Control of magnetization relaxation in magnetic insulators via interfacial spin scattering is demonstrated. The experiments use nanometer-thick yttrium iron garnet (YIG)/Pt layered structures, with the Pt layer biased by an electric voltage. The bias voltage produces a spin current across the Pt thi...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2011-10, Vol.99 (16), p.162511-162511-3
Main Authors: Wang, Zihui, Sun, Yiyan, Song, Young-Yeal, Wu, Mingzhong, Schultheiß, Helmut, Pearson, John E., Hoffmann, Axel
Format: Article
Language:English
Subjects:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONFIGURATION
DAMPING
FERRITE GARNETS
FERROMAGNETIC RESONANCE
MAGNETIZATION
RELAXATION
SCATTERING
SPIN
THICKNESS
THIN FILMS
TORQUE
YTTRIUM
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Control of magnetization relaxation in magnetic insulators via interfacial spin scattering is demonstrated. The experiments use nanometer-thick yttrium iron garnet (YIG)/Pt layered structures, with the Pt layer biased by an electric voltage. The bias voltage produces a spin current across the Pt thickness. As this current scatters off the YIG surface, it exerts a torque on the YIG surface spins. This torque can reduce or enhance the damping and thereby decrease or increase the ferromagnetic resonance linewidth of the YIG film, depending on the field/current configuration.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3654148