Coincident site lattice-matched InGaN on (111) spinel substrates

Coincident site lattice-matched wurtzite (0001) In 0.31 Ga 0.69 N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl 2 O 4 spinel substrate. The coincident site lattice matching condition involves a 30° rotation between the lattice of...

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Bibliographic Details
Published in:Applied physics letters 2012-04, Vol.100 (15), p.152106-152106-3
Main Authors: Norman, A. G., Dippo, P. C., Moutinho, H. R., Simon, J., Ptak, A. J.
Format: Article
Language:English
Subjects:
crystal lattices
crystal structure
crystallographic defects
DISLOCATIONS
EFFICIENCY
electron backscatter diffraction
energy dispersive X-ray spectroscopy
epitaxy
focused ion beam
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LIGHT EMITTING DIODES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
PHOTOLUMINESCENCE
ROTATION
scanning electron microscopy
SOLAR ENERGY
SPINELS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
WAVELENGTHS
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Summary:Coincident site lattice-matched wurtzite (0001) In 0.31 Ga 0.69 N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl 2 O 4 spinel substrate. The coincident site lattice matching condition involves a 30° rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the "green gap" of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3702577