Dielectric-Constant-Enhanced Hall Mobility in Complex Oxides

The high dielectric constant of doped ferroelectric KTa1‐xNbxO3 is shown to increase dielectric screening of electron scatterers, and thus to enhance the electronic mobility, overcoming one of the key limitations in the application of functional oxides. These observations are based on transport and...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2012-08, Vol.24 (29), p.3965-3969
Main Authors: Siemons, Wolter, McGuire, Michael A., Cooper, Valentino R., Biegalski, Michael D., Ivanov, Ilia N., Jellison, Gerald E., Boatner, Lynn A., Sales, Brian C., Christen, Hans M.
Format: Article
Language:English
Subjects:
CERAMICS
CHARGE TRANSPORT
DIELECTRIC MATERIALS
dielectrics
Electronics
ELECTRONS
ferroics
FUNCTIONALS
Magnetics
MATERIALS SCIENCE
OXIDES
Oxides - chemistry
PERMITTIVITY
Temperature
TRANSPORT
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Summary:The high dielectric constant of doped ferroelectric KTa1‐xNbxO3 is shown to increase dielectric screening of electron scatterers, and thus to enhance the electronic mobility, overcoming one of the key limitations in the application of functional oxides. These observations are based on transport and optical measurements as well as band structure calculations.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201104665