Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application

The model explaining an enhanced collected charge in detectors irradiated to 10 15–10 16 n eq/cm 2 is developed. This effect was first revealed in heavily irradiated n-on-p detectors operated at high bias voltage ranging from 900 to 1700 V. The model is based on the fundamental effect of carrier ava...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2011-12, Vol.658 (1), p.145-151
Main Authors: Eremin, V., Verbitskaya, E., Zabrodskii, A., Li, Z., Härkönen, J.
Format: Article
Language:English
Subjects:
Avalanches
Bias
CERN
Charge
CHARGE COLLECTION
DEFECTS
Detectors
DISTRIBUTION
EFFICIENCY
Electric charge
Electric field distribution
ELECTRIC FIELDS
HARDNESS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Irradiation
LUMINOSITY
Mathematical models
Multiplication
P-N JUNCTIONS
Radiation hardness
RADIATIONS
SILICON
Silicon detector
SPACE CHARGE
STABILIZATION
TOWNSEND DISCHARGE
TRAPPING
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Summary:The model explaining an enhanced collected charge in detectors irradiated to 10 15–10 16 n eq/cm 2 is developed. This effect was first revealed in heavily irradiated n-on-p detectors operated at high bias voltage ranging from 900 to 1700 V. The model is based on the fundamental effect of carrier avalanche multiplication in the space charge region and in our case is extended with a consideration of p–n junctions with a high concentration of the deep levels. It is shown that the efficient trapping of free carriers from the bulk generation current to the deep levels of radiation induced defects leads to the stabilization of the irradiated detector operation in avalanche multiplication mode due to the reduction of the electric field at the junction. The charge collection efficiency and the detector reverse current dependences on the applied bias have been numerically simulated in this study and they well correlate to the recent experimental results of CERN RD50 collaboration. The developed model of enhanced collected charge predicts a controllable operation of heavily irradiated detectors that is promising for the detector application in the upcoming experiments in a high luminosity collider.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2011.05.002