Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces

The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization...

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Bibliographic Details
Published in:Applied physics letters 2010-03, Vol.96 (13)
Main Authors: Meyer, J., Shu, A., Kröger, M., Kahn, A.
Format: Article
Language:English
Subjects:
charge transport
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
electrodes - solar
solar (photovoltaic)
synthesis (novel materials)
synthesis (scalable processing)
synthesis (self-assembly)
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Summary:The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO3 are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3374333