Measurement of the Kapitza resistance across a bicrystal interface

The Kapitza resistance across a Si bicrystal interface was measured using a pump probe optical technique. This approach, termed time resolved thermal wave microscopy (TRTWM), uses ultrafast laser pulses to image lateral thermal transport in bare semiconductors. The sample geometry is that of a Si bi...

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Bibliographic Details
Published in:Journal of applied physics 2011-01, Vol.109 (8)
Main Authors: Hurley, David H., Khafizov, Marat, Shinde, S. L.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
phonons, thermal conductivity, nuclear (including radiation effects), defects, materials and chemistry by design
Online Access:Get full text
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Summary:The Kapitza resistance across a Si bicrystal interface was measured using a pump probe optical technique. This approach, termed time resolved thermal wave microscopy (TRTWM), uses ultrafast laser pulses to image lateral thermal transport in bare semiconductors. The sample geometry is that of a Si bicrystal with the vertically oriented boundary intersecting the sample surface. High resolution transmission electron microscopy of the boundary region revealed a thin SiO₂ layer at the interface. By comparing experimental results with a continuum thermal transport model the Kapitza resistance between the Si and SiO2 was estimated to be 2.3 × 10-9 m2K/W.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3573511