In-situ oxygen x-ray absorption spectroscopy investigation of the resistance modulation mechanism in LiNbO2 memristors

In situ near edge x-ray absorption fine structure spectroscopy (NEXAFS) is performed on LiNbO2 analog memristors to identify the underlying analog resistance modulation mechanism. Empty electronic state gradients in the NEXAFS difference spectra are observed in biased devices indicating a gradual mo...

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Bibliographic Details
Published in:Applied physics letters 2012-04, Vol.100 (18)
Main Authors: Greenlee, Jordan D., Petersburg, Cole F., Laws Calley, W., Jaye, Cherno, Fischer, Daniel A., Alamgir, Faisal M., Alan Doolittle, W.
Format: Article
Language:English
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Summary:In situ near edge x-ray absorption fine structure spectroscopy (NEXAFS) is performed on LiNbO2 analog memristors to identify the underlying analog resistance modulation mechanism. Empty electronic state gradients in the NEXAFS difference spectra are observed in biased devices indicating a gradual movement of lithium. This movement of lithium supports the assertion that simple ion dopant drift and diffusion dominate the analog memristor’s resistance response. By identifying the physical memristance mechanism in analog LiNbO2 memristors, suggestions are made for additions to the memristor to modify device performance for both neuromorphic computing and memory applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4709422