Critical Resistance at the Superconductor-Insulator Transition in Hole-Doped Cuprates

• Published in: Journal of superconductivity and novel magnetism 2013-04, Vol.26 (4), p.749-754
• Main Authors: Dubuis, Guy, Bollinger, Anthony T., Pavuna, Davor, Božović, Ivan
• Format: Article
• Language: English
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Condensed Matter Physics; Condensed matter: electronic structure, electrical, magnetic, and optical properties; COPPER OXIDE; Critical point; Cross-disciplinary physics: materials science; rheology; Cuprates; Cuprates superconductors (high tc and insulating parent compounds); Doping; ELECTRICAL CONDUCTIVITY; Electrical resistivity; Electron states; Electronics; Exact sciences and technology; HOLES; INSULATION (ELECTRICAL); INSULATORS; Magnetic Materials; Magnetism; Materials science; Metal-insulator transitions and other electronic transitions; Nanoscale materials and structures: fabrication and characterization; Original Paper; Physics; Physics and Astronomy; Quantum dots; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Strongly Correlated Systems; SUPERCONDUCTIVITY; SUPERCONDUCTORS; Transistors; Two dimensional
• ISSN: 1557-1939; 1557-1947
• DOI: 10.1007/s10948-012-1982-6

Here, we show that in several p-type cuprates, the superconductor-to-insulator transition (SIT) occurs at the critical sheet resistance approximately equal to the quantum resistance of pairs, RQ= h /4 e 2 =6.5 kΩ. In a relatively broad range of temperatures and doping levels near the quantum critical point, the sheet resistance shows universal behavior and scaling characteristic of two-dimensional quantum phase transition.