Enhancement of the ν = 5/2 fractional quantum Hall state in a small in-plane magnetic field

Using a 50-nm-width ultraclean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor ν=5/2 fractional quantum Hall effect in a perpendicular magnetic field B∼1.7  T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minim...

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Published in:Physical review letters 2012-05, Vol.108 (19), p.196805-196805, Article 196805
Main Authors: Liu, Guangtong, Zhang, Chi, Tsui, D C, Knez, Ivan, Levine, Aaron, Du, R R, Pfeiffer, L N, West, K W
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container_end_page 196805
container_issue 19
container_start_page 196805
container_title Physical review letters
container_volume 108
creator Liu, Guangtong
Zhang, Chi
Tsui, D C
Knez, Ivan
Levine, Aaron
Du, R R
Pfeiffer, L N
West, K W
description Using a 50-nm-width ultraclean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor ν=5/2 fractional quantum Hall effect in a perpendicular magnetic field B∼1.7  T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt angle 0
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title Enhancement of the ν = 5/2 fractional quantum Hall state in a small in-plane magnetic field
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