Critical behavior of a strongly interacting 2D electron system

With decreasing density n(s) the thermopower S of a low-disorder two-dimensional electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude tending to a divergence at a finite disorder-independent density n(t) consistent with the critical form (-T/S) is propor...

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Bibliographic Details
Published in:Physical review letters 2012-08, Vol.109 (9), p.096405-096405, Article 096405
Main Authors: Mokashi, A, Li, S, Wen, B, Kravchenko, S V, Shashkin, A A, Dolgopolov, V T, Sarachik, M P
Format: Article
Language:English
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Summary:With decreasing density n(s) the thermopower S of a low-disorder two-dimensional electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude tending to a divergence at a finite disorder-independent density n(t) consistent with the critical form (-T/S) is proportional to (n(s)-n(t))(x) with x=1.0±0.1 (T is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly interacting 2D electron system.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.109.096405