Submicron mapping of strain distributions induced by three-dimensional through-silicon via features

Strain distributions within the active layer of a silicon-on-insulator substrate induced by through-silicon via (TSV) structures were mapped using x-ray microbeam diffraction. The interaction region of the out-of-plane strain, ε33, from a TSV feature containing copper metallization extended approxim...

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Bibliographic Details
Published in:Applied physics letters 2013-06, Vol.102 (25)
Main Authors: Murray, Conal E., Graves-Abe, T., Robison, R., Cai, Z.
Format: Article
Language:English
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Summary:Strain distributions within the active layer of a silicon-on-insulator substrate induced by through-silicon via (TSV) structures were mapped using x-ray microbeam diffraction. The interaction region of the out-of-plane strain, ε33, from a TSV feature containing copper metallization extended approximately 6 μm from the TSV outer edge for circular and annular geometries. Measurements conducted on identical TSV structures without copper reveal that strain fields generated by the liner materials extend a similar distance and with comparable magnitude as those with copper. FEM-based simulations show the total interaction region induced by the TSV can extend farther than that of ε33.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4812481