Loading…

Effect of domain structure on dielectric nonlinearity in epitaxial BiFeO3 films

Rayleigh analysis has been used to investigate dielectric nonlinearity in epitaxial (001)-oriented BiFeO3 films with engineered domain structures from single- to four-variant and stripe domain samples with 71° and 109° domain walls. Single-domain variant films display minimal irreversible contributi...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2010-12, Vol.97 (26)
Main Authors: Ihlefeld, J. F., Folkman, C. M., Baek, S. H., Brennecka, G. L., George, M. C., Carroll, J. F., Eom, C. B.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c322t-c99142d823cbdb94b2e51a4a9b421a29837ead2090dd15dd282f6ff71b2c3e313
cites cdi_FETCH-LOGICAL-c322t-c99142d823cbdb94b2e51a4a9b421a29837ead2090dd15dd282f6ff71b2c3e313
container_end_page
container_issue 26
container_start_page
container_title Applied physics letters
container_volume 97
creator Ihlefeld, J. F.
Folkman, C. M.
Baek, S. H.
Brennecka, G. L.
George, M. C.
Carroll, J. F.
Eom, C. B.
description Rayleigh analysis has been used to investigate dielectric nonlinearity in epitaxial (001)-oriented BiFeO3 films with engineered domain structures from single- to four-variant and stripe domain samples with 71° and 109° domain walls. Single-domain variant films display minimal irreversible contributions, whereas the ratio of irreversible to reversible contributions increases by approximately one order of magnitude as the number of variants increases to two- and four-variants, respectively. These measurements indicate that the density of domain walls and degree of domain wall complexity influence the number and strength of domain wall pinning sites.
doi_str_mv 10.1063/1.3533017
format article
fullrecord <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1121645</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3533017</sourcerecordid><originalsourceid>FETCH-LOGICAL-c322t-c99142d823cbdb94b2e51a4a9b421a29837ead2090dd15dd282f6ff71b2c3e313</originalsourceid><addsrcrecordid>eNotkE1LAzEYhIMoWKsH_0Hw5mFr3rz7laOWtgqFXvQcsvnAyDYpSQr237vSnoZhHoZhCHkEtgDW4gsssEFk0F2RGbCuqxCgvyYzxhhWrWjgltzl_DPZhiPOyG7lnNWFRkdN3CsfaC7pqMsxWRoDNd6OU5y8piGG0Qerki8nOnH24Iv69Wqkb35td0idH_f5ntw4NWb7cNE5-VqvPpfv1Xa3-Vi-biuNnJdKCwE1Nz1HPZhB1AO3DahaiaHmoLjosbPKcCaYMdAYw3vuWuc6GLhGi4Bz8nTujbl4mbUvVn_rGMK0VgJwaOtmgp7PkE4x52SdPCS_V-kkgcn_uyTIy134B9r6W_g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of domain structure on dielectric nonlinearity in epitaxial BiFeO3 films</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Ihlefeld, J. F. ; Folkman, C. M. ; Baek, S. H. ; Brennecka, G. L. ; George, M. C. ; Carroll, J. F. ; Eom, C. B.</creator><creatorcontrib>Ihlefeld, J. F. ; Folkman, C. M. ; Baek, S. H. ; Brennecka, G. L. ; George, M. C. ; Carroll, J. F. ; Eom, C. B. ; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><description>Rayleigh analysis has been used to investigate dielectric nonlinearity in epitaxial (001)-oriented BiFeO3 films with engineered domain structures from single- to four-variant and stripe domain samples with 71° and 109° domain walls. Single-domain variant films display minimal irreversible contributions, whereas the ratio of irreversible to reversible contributions increases by approximately one order of magnitude as the number of variants increases to two- and four-variants, respectively. These measurements indicate that the density of domain walls and degree of domain wall complexity influence the number and strength of domain wall pinning sites.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3533017</identifier><language>eng</language><publisher>United States</publisher><ispartof>Applied physics letters, 2010-12, Vol.97 (26)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-c99142d823cbdb94b2e51a4a9b421a29837ead2090dd15dd282f6ff71b2c3e313</citedby><cites>FETCH-LOGICAL-c322t-c99142d823cbdb94b2e51a4a9b421a29837ead2090dd15dd282f6ff71b2c3e313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,778,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1121645$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ihlefeld, J. F.</creatorcontrib><creatorcontrib>Folkman, C. M.</creatorcontrib><creatorcontrib>Baek, S. H.</creatorcontrib><creatorcontrib>Brennecka, G. L.</creatorcontrib><creatorcontrib>George, M. C.</creatorcontrib><creatorcontrib>Carroll, J. F.</creatorcontrib><creatorcontrib>Eom, C. B.</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><title>Effect of domain structure on dielectric nonlinearity in epitaxial BiFeO3 films</title><title>Applied physics letters</title><description>Rayleigh analysis has been used to investigate dielectric nonlinearity in epitaxial (001)-oriented BiFeO3 films with engineered domain structures from single- to four-variant and stripe domain samples with 71° and 109° domain walls. Single-domain variant films display minimal irreversible contributions, whereas the ratio of irreversible to reversible contributions increases by approximately one order of magnitude as the number of variants increases to two- and four-variants, respectively. These measurements indicate that the density of domain walls and degree of domain wall complexity influence the number and strength of domain wall pinning sites.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMoWKsH_0Hw5mFr3rz7laOWtgqFXvQcsvnAyDYpSQr237vSnoZhHoZhCHkEtgDW4gsssEFk0F2RGbCuqxCgvyYzxhhWrWjgltzl_DPZhiPOyG7lnNWFRkdN3CsfaC7pqMsxWRoDNd6OU5y8piGG0Qerki8nOnH24Iv69Wqkb35td0idH_f5ntw4NWb7cNE5-VqvPpfv1Xa3-Vi-biuNnJdKCwE1Nz1HPZhB1AO3DahaiaHmoLjosbPKcCaYMdAYw3vuWuc6GLhGi4Bz8nTujbl4mbUvVn_rGMK0VgJwaOtmgp7PkE4x52SdPCS_V-kkgcn_uyTIy134B9r6W_g</recordid><startdate>20101227</startdate><enddate>20101227</enddate><creator>Ihlefeld, J. F.</creator><creator>Folkman, C. M.</creator><creator>Baek, S. H.</creator><creator>Brennecka, G. L.</creator><creator>George, M. C.</creator><creator>Carroll, J. F.</creator><creator>Eom, C. B.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20101227</creationdate><title>Effect of domain structure on dielectric nonlinearity in epitaxial BiFeO3 films</title><author>Ihlefeld, J. F. ; Folkman, C. M. ; Baek, S. H. ; Brennecka, G. L. ; George, M. C. ; Carroll, J. F. ; Eom, C. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-c99142d823cbdb94b2e51a4a9b421a29837ead2090dd15dd282f6ff71b2c3e313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ihlefeld, J. F.</creatorcontrib><creatorcontrib>Folkman, C. M.</creatorcontrib><creatorcontrib>Baek, S. H.</creatorcontrib><creatorcontrib>Brennecka, G. L.</creatorcontrib><creatorcontrib>George, M. C.</creatorcontrib><creatorcontrib>Carroll, J. F.</creatorcontrib><creatorcontrib>Eom, C. B.</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ihlefeld, J. F.</au><au>Folkman, C. M.</au><au>Baek, S. H.</au><au>Brennecka, G. L.</au><au>George, M. C.</au><au>Carroll, J. F.</au><au>Eom, C. B.</au><aucorp>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of domain structure on dielectric nonlinearity in epitaxial BiFeO3 films</atitle><jtitle>Applied physics letters</jtitle><date>2010-12-27</date><risdate>2010</risdate><volume>97</volume><issue>26</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Rayleigh analysis has been used to investigate dielectric nonlinearity in epitaxial (001)-oriented BiFeO3 films with engineered domain structures from single- to four-variant and stripe domain samples with 71° and 109° domain walls. Single-domain variant films display minimal irreversible contributions, whereas the ratio of irreversible to reversible contributions increases by approximately one order of magnitude as the number of variants increases to two- and four-variants, respectively. These measurements indicate that the density of domain walls and degree of domain wall complexity influence the number and strength of domain wall pinning sites.</abstract><cop>United States</cop><doi>10.1063/1.3533017</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2010-12, Vol.97 (26)
issn 0003-6951
1077-3118
language eng
recordid cdi_osti_scitechconnect_1121645
source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Effect of domain structure on dielectric nonlinearity in epitaxial BiFeO3 films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T22%3A26%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20domain%20structure%20on%20dielectric%20nonlinearity%20in%20epitaxial%20BiFeO3%20films&rft.jtitle=Applied%20physics%20letters&rft.au=Ihlefeld,%20J.%20F.&rft.aucorp=Sandia%20National%20Lab.%20(SNL-NM),%20Albuquerque,%20NM%20(United%20States)&rft.date=2010-12-27&rft.volume=97&rft.issue=26&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3533017&rft_dat=%3Ccrossref_osti_%3E10_1063_1_3533017%3C/crossref_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c322t-c99142d823cbdb94b2e51a4a9b421a29837ead2090dd15dd282f6ff71b2c3e313%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true