Images of edge current in InAs/GaSb quantum wells

Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e(2)/h per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisin...

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Bibliographic Details
Published in:Physical review letters 2014-07, Vol.113 (2), p.026804-026804, Article 026804
Main Authors: Spanton, Eric M, Nowack, Katja C, Du, Lingjie, Sullivan, Gerard, Du, Rui-Rui, Moler, Kathryn A
Format: Article
Language:English
Subjects:
Devices
Indium arsenides
MATSCI
Quantum wells
Scattering
Transport
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Summary:Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e(2)/h per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than h/e(2), it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.113.026804