Ion beam modification of topological insulator bismuth selenide

We demonstrate chemical doping of a topological insulator Bi2Se3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type co...

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Bibliographic Details
Published in:Applied physics letters 2014-12, Vol.105 (24)
Main Authors: Sharma, P. A., Lima Sharma, A. L., Hekmaty, M., Hattar, K., Stavila, V., Goeke, R., Erickson, K., Medlin, D. L., Brahlek, M., Koirala, N., Oh, S.
Format: Article
Language:English
Subjects:
Annealing
Applied physics
Bismuth
Carrier density
doping
insulators
Ion beams
Ion implantation
MATERIALS SCIENCE
Organic chemistry
Structural damage
Thin films
Transmission electron microscopy
X-ray diffraction
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Summary:We demonstrate chemical doping of a topological insulator Bi2Se3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi2Se3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi2Se3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4904936