Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations

The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be us...

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Bibliographic Details
Published in:ACS nano 2015-06, Vol.9 (6), p.6333-6342
Main Authors: Puretzky, Alexander A, Liang, Liangbo, Li, Xufan, Xiao, Kai, Wang, Kai, Mahjouri-Samani, Masoud, Basile, Leonardo, Idrobo, Juan Carlos, Sumpter, Bobby G, Meunier, Vincent, Geohegan, David B
Format: Article
Language:English
Subjects:
first-principles calculations
low-frequency Raman spectroscopy
MATERIALS SCIENCE
stacking configurations
transition metal dichalcogenides
two-dimensional materials
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Summary:The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks; however, fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low frequency (LF) Raman modes (
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.5b01884