Bi flux-dependent MBE growth of GaSbBi alloys

The incorporation of Bi in GaSb1−xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275°C) and growth rate (1μmh−1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering,...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2015-09, Vol.425 (C), p.241-244
Main Authors: Rajpalke, M.K., Linhart, W.M., Yu, K.M., Jones, T.S., Ashwin, M.J., Veal, T.D.
Format: Article
Language:English
Subjects:
A1. High resolution X-ray diffraction
A3. Molecular beam epitaxy
Alloys
antimonides
B1. Antimonides
B1. Bismuth compounds
B1. Gallium compounds
B2. Semiconducting III–V materials
Backscattering
bismuth compounds
Crystal growth
Droplets
Flux
Fluxes
gallium compounds
high resolution x-ray diffraction
MATERIALS SCIENCE
Molecular beam epitaxy
semiconducting III–V materials
Surface chemistry
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The incorporation of Bi in GaSb1−xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275°C) and growth rate (1μmh−1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2015.02.093