Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface

Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/...

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Bibliographic Details
Published in:Physical review letters 2015-08, Vol.115 (8), p.087201-087201, Article 087201
Main Authors: Li, Mingda, Chang, Cui-Zu, Kirby, Brian J, Jamer, Michelle E, Cui, Wenping, Wu, Lijun, Wei, Peng, Zhu, Yimei, Heiman, Don, Li, Ju, Moodera, Jagadeesh S
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Dissipation
Doping
Exchange
Heterostructures
Joining
Playgrounds
Proximity
Proximity effect (electricity)
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Summary:Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb(2-x)V(x)Te3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.115.087201