Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the...

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Published in:Nano letters 2015-12, Vol.15 (12), p.8245-8249
Main Authors: Koirala, Nikesh, Brahlek, Matthew, Salehi, Maryam, Wu, Liang, Dai, Jixia, Waugh, Justin, Nummy, Thomas, Han, Myung-Geun, Moon, Jisoo, Zhu, Yimei, Dessau, Daniel, Wu, Weida, Armitage, N. Peter, Oh, Seongshik
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Language:English
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CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
heterostructure
molecular beam epitaxy
quantum Hall effect
thin films
topological insulator
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cited_by cdi_FETCH-LOGICAL-a487t-c4d8d557b7c45c49b82c4af6e2b0db3e58791b95fcf10f5bb4e8ae06221c5c2c3
cites cdi_FETCH-LOGICAL-a487t-c4d8d557b7c45c49b82c4af6e2b0db3e58791b95fcf10f5bb4e8ae06221c5c2c3
container_end_page 8249
container_issue 12
container_start_page 8245
container_title Nano letters
container_volume 15
creator Koirala, Nikesh
Brahlek, Matthew
Salehi, Maryam
Wu, Liang
Dai, Jixia
Waugh, Justin
Nummy, Thomas
Han, Myung-Geun
Moon, Jisoo
Zhu, Yimei
Dessau, Daniel
Wu, Weida
Armitage, N. Peter
Oh, Seongshik
description Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.
doi_str_mv 10.1021/acs.nanolett.5b03770
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subjects CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
heterostructure
molecular beam epitaxy
quantum Hall effect
thin films
topological insulator
title Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering
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