Continuous control of spin polarization using a magnetic field

The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demons...

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Bibliographic Details
Published in:Applied physics letters 2016-05, Vol.108 (21)
Main Authors: Gifford, J. A., Zhao, G. J., Li, B. C., Tracy, Brian D., Zhang, J., Kim, D. R., Smith, David J., Chen, T. Y.
Format: Article
Language:English
Subjects:
Applied physics
Computer memory
Electrons
Giant magnetoresistance
Magnetic fields
Magnetoresistance
Magnetoresistivity
Multilayers
Point contact
Polarization (spin alignment)
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Summary:The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4952437