Continuous control of spin polarization using a magnetic field

The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demons...

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Published in:Applied physics letters 2016-05, Vol.108 (21)
Main Authors: Gifford, J. A., Zhao, G. J., Li, B. C., Tracy, Brian D., Zhang, J., Kim, D. R., Smith, David J., Chen, T. Y.
Format: Article
Language:English
Subjects:
Applied physics
Computer memory
Electrons
Giant magnetoresistance
Magnetic fields
Magnetoresistance
Magnetoresistivity
Multilayers
Point contact
Polarization (spin alignment)
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cited_by cdi_FETCH-LOGICAL-c389t-f7f83506fdadc1c1a7f3d3700cdb3adbde471702a351b3e02495fa05f92ba3e53
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container_issue 21
container_start_page
container_title Applied physics letters
container_volume 108
creator Gifford, J. A.
Zhao, G. J.
Li, B. C.
Tracy, Brian D.
Zhang, J.
Kim, D. R.
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Chen, T. Y.
description The giant magnetoresistance (GMR) of a point contact between a Co/Cu multilayer and a superconductor tip varies for different bias voltage. Direct measurement of spin polarization by Andreev reflection spectroscopy reveals that the GMR change is due to a change in spin polarization. This work demonstrates that the GMR structure can be utilized as a spin source and that the spin polarization can be continuously controlled by using an external magnetic field.
doi_str_mv 10.1063/1.4952437
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建）
subjects Applied physics
Computer memory
Electrons
Giant magnetoresistance
Magnetic fields
Magnetoresistance
Magnetoresistivity
Multilayers
Point contact
Polarization (spin alignment)
title Continuous control of spin polarization using a magnetic field
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