Fully CMOS-compatible titanium nitride nanoantennas

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (T...

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Bibliographic Details
Published in:Applied physics letters 2016-02, Vol.108 (5)
Main Authors: Briggs, Justin A., Naik, Gururaj V., Petach, Trevor A., Baum, Brian K., Goldhaber-Gordon, David, Dionne, Jennifer A.
Format: Article
Language:English
Subjects:
Applied physics
Atomic layer epitaxy
CMOS
Compatibility
Data processing
Electron beam lithography
Epitaxial growth
Information processing
Magnesium oxide
Melt temperature
Nanoantennas
Optical properties
Silicon dioxide
Silicon substrates
Superconductors (materials)
Titanium nitride
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Summary:CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4941413