Amber-green light-emitting diodes using order-disorder AlxIn1-xP heterostructures

We demonstrate amber-green emission from AlxIn1-xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1-yAs buffer layer and feature electron confinement based on the control of AlxIn1-xP CuPt atomic ord...

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Bibliographic Details
Published in:Journal of applied physics 2013-01, Vol.114 (7)
Main Authors: Christian, Theresa M, Beaton, Daniel A, Mukherjee, Kunal, Alberi, Kirstin, Fitzgerald, Eugene A, Mascarenhas, Angelo
Format: Article
Language:English
Subjects:
amber-green
Confinement
Current carriers
diodes
Emission
Emittance
ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
Gallium arsenide
LED
Light-emitting diodes
Luminescence
Order disorder
OTHER INSTRUMENTATION
solid-state lighting
SSL
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Summary:We demonstrate amber-green emission from AlxIn1-xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1-yAs buffer layer and feature electron confinement based on the control of AlxIn1-xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm2. The light output at room temperature from our AlxIn1-xP LED structure emitting at 600 nm is 39% as bright as a GaxIn1-xP LED emitting at 650 nm.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4818477