Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

• Published in: Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2015-05, Vol.33 (3)
• Main Authors: Ahn, Shihyun, Zhu, Weidi, Dong, Chen, Le, Lingcong, Hwang, Ya-Hsi, Kim, Byung-Jae, Ren, Fan, Pearton, Stephen J., Lind, Aaron G., Jones, Kevin S., Kravchenko, I. I., Zhang, Ming-Lan
• Format: Article
• Language: English
• Subjects: MATERIALS SCIENCE
• ISSN: 2166-2746; 2166-2754
• DOI: 10.1116/1.4918715

The effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs) was studied. AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm−2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.